FQPF3P20 Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – QFET P-CHANNEL

FQPF3P20
QFET P-CHANNEL
Fig 7. Breakdown Voltage vs. Temperature
1.2
1.1
1.0
0.9
0.8
-100
¡Ø Note :
1. V_GS = 0 V
2. I_D = -250 ¥ìA
-50
0
50
100
150
200
T_J, Junction Temperature [^oC]
Fig 9. Max. Safe Operating Area
Operation in This Area
is Limited by R
DS(on)
10¹
1 ms
10 ms
100 ms
10⁰
DC
10^-1
10^-2
10⁰
¡Ø Notes :
1. T = 25 oC
C
2. T = 150 oC
J
3. Single Pulse
10¹
10²
-V , Drain-Source Voltage [V]
DS
Fig 8. On-Resistance vs. Temperature
2.5
2.0
1.5
1.0
0.5
0.0
-100
¡Ø Note :
1. V = -10 V
GS
2. I = -1.4 A
D
-50
0
50
100
150
200
T , Junction Temperature [oC]
J
Fig 10. Max. Drain Current vs. Case Temperature
2.5
2.0
1.5
1.0
0.5
0.0
25
50
75
100
125
150
T , Case Temperature [¡°ÉC]]
C
Fig 11. Thermal Response
D = 0 .5
10⁰
0.2
0.1
0.05
1 0 ^-1
0.02
0.01
s in g le p u ls e
¡Ø N o te s :
1 . Z (t) = 3.9 ¡É /W M ax.
¥ èJ C
2 . D u ty F a c to r, D = t /t
12
3 . T - T = P * Z (t)
JM
C
DM
¥ èJ C
P_DM
t₁
t₂
1 0 ^-2
1 0 ^-5
1 0 ^-4
1 0 ^-3
1 0 ^-2
1 0 ^-1
10⁰
10¹
t₁, S q u a re W a ve P u lse D u ra tio n [se c ]
4