FQPF3P20 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – QFET P-CHANNEL

QFET P-CHANNEL
FEATURES
• Advanced New Design
• Avalanche Rugged Technology
• Rugged Gate Oxide Technology
• Very Low Intrinsic Capacitances
• Excellent Switching Characteristics
• Unrivalled Gate Charge: 6.0nC (Typ.)
• Extended Safe Operating Area
• Lower R_DS(ON): 2.06Ω (Typ.)
ABSOLUTE MAXIMUM RATINGS
Symbol
V_DSS
I_D
I_DM
V_GS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J, T_STG
T_L
Characteristics
Drain-to-Source Voltage
Continuous Drain Current (T_C = 25°C)
Continuous Drain Current (T_C = 100°C)
Drain Current-Pulsed
x
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
y
Avalanche Current
x
Repetitive Avalanche Energy
x
Peak Diode Recovery dv/dt
z
Total Power Dissipation (T_C = 25°C)
Linear Derating Factor
Operating Junction and Storage
Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
THERMAL RESISTANCE
Symbol
R_θJC
R_θJA
Characteristics
Junction-to-Case
Junction-to-Ambient
FQPF3P20
BV_DSS = −200V
R_DS(ON) = 2.7Ω
I_D = −2.2A
TO-220F
1
2
3
1. Gate 2. Drain 3. Source
Value
−200
−2.2
−1.39
−8.8
±30
150
−2.2
3.2
−5.5
32
0.26
−55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
Typ.
−
−
Max.
3.9
62.5
Units
°C/W
© 1999 Fairchild Semiconductor Corporation
REV. B
1