FQPF3P20 Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – QFET P-CHANNEL

FQPF3P20
QFET P-CHANNEL
ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise specified)
Symbol
BV_DSS
∆BV/∆T_J
V_GS(th)
I_GSS
Characteristics
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage, Forward
Gate-Source Leakage, Reverse
I_DSS Drain-to-Source Leakage Current
R_DS(on)
g_fs
C_iss
C_oss
C_rss
t_d(on)
t_r
t_d(off)
t_f
Q_g
Q_gs
Q_gd
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain (Miller) Charge
Min.
−200
−
−3.0
−
−
−
−
Typ.
−
−0.18
−
−
−
−
−
Max.
−
−
−5.0
−100
100
−1
−10
Units
Test Conditions
V
V/°C
V
nA
µA
V_GS=0V, I_D=−250µA
I_D=−250µA, See Fig 7
V_DS=−5V, I_D=−250µA
V_GS=−30V
V_GS= 30V
V_DS=−200V
V_DS=−160V, T_C=125°C
−
2.06 2.7
Ω V_GS=−10V, I_D=−1.1A {
−
1.15
−
S V_DS=−40V, I_D=−1.1A {
−
190 250
V_GS=0V, V_DS=−25V
−
45
60
pF f=1MHz
−
7.5 10
See Fig 5
−
8.5 25
−
35
80
V_DD=−100V, I_D=−2.8A
−
12
35
ns R_G=50Ω
See Fig 13
{|
−
25
60
−
6.0 8.0
V_DS=−160V, V_GS=−10V
−
1.7
−
nC I_D=−2.8A
−
2.9
−
See Fig 6 & Fig 12 { |
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
I_S
I_SM
V_SD
t_rr
Q_rr
Characteristics
Continuous Source Current
Pulsed-Source Current
x
Diode Forward Voltage
{
Reverse Recovery Time
Reverse Recovery Charge
Min.
−
−
−
−
−
Typ.
−
−
−
100
0.34
Max. Units
Test Conditions
−2.2
Integral reverse pn-diode
A
−8.8
in the MOSFET
−5.0
−
−
V T_J=25°C, I_S=−2.2A, V_GS=0V
ns _{TJ=25°C, IF=−2.8A, VDD=−160V}
µC ^diF^{/dt=100A/µs}
{
Notes:
x Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
y L=46.5mH, I_AS=−2.2A, V_DD=−50V, R_G=25Ω, Starting T_J =25°C
z I_SD ≤ −2.8A, di/dt ≤ 300A/µs, V_DD ≤ BV_DSS, Starting T_J =25°C
{ Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%
| Essentially Independent of Operating Temperature
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