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FQPF140N03L Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – 30V LOGIC N-Channel MOSFET
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Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
 Notes :
1. V =0V
2.
GS
ID =
250
A
0.8
-100
-50
0
50
100
150
200
TJ, Junc ionTemperature [oC]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Operation in This Area
103
is Limited by R
DS(on)
1 ms
102
10 ms
100 ms
DC
101
100
10 1
 Notes
1. T 25 oC
C
2. T 175 oC
3. Single Pulse
100
101
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
2.5
2.0
1.5
1.0
0.5
 Notes
1. VGS 10 V
2. ID 70 A
0.0
-100
-50
0
50
100
150
200
T , Junc ion Temperature [oC]
J
Figure 8. On-Resistance Variation
vs. Temperature
100
80
60
40
20
0
25
50
75
100
125
150
175
TC, Case Temperature []
Figure 10. Maximum Drain Current
vs. Case Temperature
100
D =0 .5
0 .2
1 0 -1
0 .1
0 .0 5
0 .0 2
0 .0 1
1 0 -2
1 0 -5
s in g le p u ls e
 N otes
1. Z
(t)
C
2 .4 2  /W M a x .
2 . D u t y F a c t o r , D t /t
2
3. T - T
M
C
P
DM
*
Z
(t)
C
PDM
1
t2
10-
1 0 -3
1 0 -2
1 0 -1
100
101
t1, S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
©2000 Fairchild Semiconductor International
Rev. A, April 2000
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