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FQPF140N03L Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – 30V LOGIC N-Channel MOSFET
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Electrical CharacteristicsTC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ
Max Units
Off Characteristics
BVDSS
∆BVDSS
/ ∆TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to
25°C
VDS = 30 V, VGS = 0 V
VDS = 24 V, TC = 150°C
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
30
--
-- 0.03
--
--
--
--
--
--
--
--
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on) Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
1.0
--
2.5
V
VGS = 10 V, ID = 41 A
VGS = 5 V, ID =41 A
-- 0.0038 0.0045
-- 0.005 0.006
Ω
VDS = 15 V, ID = 41 A
(Note 4) --
73
--
S
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 3400 4420 pF
-- 2090 2720 pF
--
580
755
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
td(off)
tf
Qg
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 15 V, ID = 70 A,
RG = 25 Ω
--
60
130
ns
--
770
1500
ns
--
25
60
ns
(Note 4, 5)
--
250
510
ns
VDS = 24 V, ID = 140 A,
--
73
95
nC
VGS = 5 V
-- 29.5
--
nC
(Note 4, 5) --
38.5
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
82
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
330
A
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 82 A
--
--
1.5
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 140 A,
--
70
--
ns
dIF / dt = 100 A/µs
(Note 4) --
105
--
nC
Notes
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 105µH, IAS = 82A, VDD = 15V, RG = 25 Ω, Starting TJ = 25°C
3. ISD  140A, di/dt  300A/µs, VDD  BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width  300µs, Duty cycle  2%
5. Essentially independent of operating temperature
©2000 Fairchild Semiconductor International
Rev. A, April 2000
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