FQPF140N03L Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 30V LOGIC N-Channel MOSFET

Typical Characteristics
V
Top 10.0^GV^S
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
10^{2 Bottom 3.0 V}
10¹
10^-1

Notes
1. 250s Pulse Test
2. T 25
C
10⁰
10¹
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
12.5
10.0
7.5
5.0
V = 5V
GS
V = 10V
GS
2.5

Note T 25
0.0
0
100
200
300
400
500
I_D, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
12000
10000
C C + C (C shorted)
iss gs gd ds
C C +C
oss ds gd
C_rss C_gd
8000
C_oss
C_iss
6000

Notes
1. V_GS 0 V
2. f 1 MHz
4000
C_rss
2000
0
10^-1
10⁰
10¹
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
10²
10¹
175

25

10⁰
0
-55


Notes
1. V_DS 15V
2. 250s Pulse Test
2
4
6
8
10
V , Gate-Source Voltage [V]
GS
Figure 2. Transfer Characteristics
10²
10¹
175
25


Notes
1. V 0V
2. 25^GS0s Pulse Test
10⁰
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V , Source-Drain voltage [V]
SD
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
V = 15V
DS
V = 24V
DS
8
6
4
2

Note I 140A
D
0
0
25
50
75
100
125
150
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©2000 Fairchild Semiconductor International
Rev. A, April 2000