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FQP6N40CF_12 Datasheet, PDF (4/10 Pages) Fairchild Semiconductor – 400V N-Channel MOSFET
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Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
1.2
1.1
1.0
0.9
0.8
-100
* Notes :
1. V = 0 V
GS
2. I = 250 μA
D
-50
0
50
100
150
200
T , Junction Temperature [oC]
J
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
* Notes :
1. V = 10 V
GS
2. I = 3 A
D
-50
0
50
100
150
200
T , Junction Temperature [oC]
J
Figure 9-1. Maximum Safe Operating Area
for FQP6N40CF
102
Operation in This Area
is Limited by R
DS(on)
10 μs
101
100 μs
1 ms
10 ms
100 ms
100
DC
10-1
10-2
100
* Notes :
1. T = 25 oC
C
2. T = 150 oC
J
3. Single Pulse
101
102
103
V , Drain-Source Voltage [V]
DS
Figure 10. Maximum Drain Current
vs. Case Temperature
6
5
4
3
2
1
0
25
50
75
100
125
150
T , Case Temperature [oC]
C
Figure 9-2. Maximum Safe Operating Area
for FQPF6N40CF
102
101
100
10-1
10-2
100
Operation in This Area
is Limited by R
DS(on)
10 μs
100 μs
1 ms
10 ms
100 ms
DC
* Notes :
1. T = 25 oC
C
2. T = 150 oC
J
3. Single Pulse
101
102
103
V , Drain-Source Voltage [V]
DS
4
FQP6N40CF/FQPF6N40CF Rev.C0
www.fairchildsemi.com
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