FQP6N40CF_12 Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – 400V N-Channel MOSFET

FQP6N40CF/FQPF6N40CF
400V N-Channel MOSFET
February, 2012
FRFET ^TM
Features
• 6A, 400V, R_DS(on) = 1.1 Ω @V_GS = 10 V
• Low gate charge ( typical 16nC)
• Low Crss ( typical 15pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Fast recovery body diode (typical 70ns)
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficiency switched mode power supplies, electronic lamp
ballasts based on half bridge topology.
D
G DS
TO-220
FQP Series
GDS
Absolute Maximum Ratings
Symbol
Parameter
V_DSS
I_D
I_DM
V_GSS
E_AS
I_AR
E_AR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (T_C = 25°C)
- Continuous (T_C = 100°C)
- Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
P_D
Power Dissipation (T_C = 25°C)
- Derate above 25°C
T_J, T_STG
Operating and Storage Temperature Range
T_L
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R_θJC
R_θCS
R_θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
TO-220F
FQPF Series
G
S
FQP6N40CF FQPF6N40CF
400
6
6*
3.6
3.6*
24
24*
± 30
270
6
73
20
73
38
0.58
0.3
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
FQP6N40CF
1.71
0.5
62.5
FQPF6N40CF
3.31
--
62.5
Units
°C/W
°C/W
°C/W
©2012 Fairchild Semiconductor Corporation
1
FQP6N40CF/FQPF6N40CF Rev.C0
www.fairchildsemi.com