FQP6N40CF_12 Datasheet, PDF (3/10 Pages) Fairchild Semiconductor – 400V N-Channel MOSFET

Typical Performance Characteristics
Figure 1. On-Region Characteristics
V
GS
Top : 15.0 V
10¹
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
10⁰
10^-1
10^-1
* Notes :
1. 250μs Pulse Test
2. T = 25^oC
C
10⁰
10¹
V , Drain-Source Voltage [V]
DS
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
V = 10V
GS
V = 20V
GS
* Note : T = 25oC
J
5
10
15
20
I , Drain Current [A]
D
Figure 2. Transfer Characteristics
10¹
150^oC
25^oC
10⁰
-55^oC
10^-1
2
* Notes :
1. V = 40V
DS
2. 250μs Pulse Test
4
6
8
10
V , Gate-Source Voltage [V]
GS
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
10¹
10⁰
10^-1
0.2
150^oC
25^oC
* Notes :
1. V = 0V
GS
2. 250μs Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
V , Source-Drain voltage [V]
SD
Figure 5. Capacitance Characteristics
1200
1000
800
600
400
200
0
10^-1
C
iss
C
oss
C
rss
C = C + C (C = shorted)
iss
gs
gd ds
C =C +C
oss
ds
gd
C =C
rss
gd
* Note ;
1. V = 0 V
GS
2. f = 1 MHz
10⁰
10¹
V , Drain-Source Voltage [V]
DS
Figure 6. Gate Charge Characteristics
12
V = 80V
DS
10
V = 200V
DS
8
V = 320V
DS
6
4
2
* Note : I = 6A
D
0
0
5
10
15
20
Q , Total Gate Charge [nC]
G
3
FQP6N40CF/FQPF6N40CF Rev.C0
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