FQP1N60 Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – QFET N-CHANNEL

FQP1N60
QFET N-CHANNEL
Fig 7. Breakdown Voltage vs. Temperature
1.2
1.1
1.0
0.9
0.8
-100
¡Ø Note :
1. V_GS = 0 V
2. I_D = 250 ¥ìA
-50
0
50
100
150
200
T_J, Junction Temperature [^oC]
10¹
10⁰
10^-1
10^-2
10⁰
Fig 9. Max. Safe Operating Area
Operation in This Area
is Limited by R
DS(on)
100 µs
1 ms
10 ms
DC
¡Ø Notes :
1. T_C = 25 ^oC
2. T = 150 ^oC
J
3. Single Pulse
10¹
10²
10³
V , Drain-Source Voltage [V]
DS
Fig 8. On-Resistance vs. Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
¡Ø Note :
1. V = 10 V
GS
2. I = 0.6 A
D
-50
0
50
100
150
200
T , Junction Temperature [oC]
J
Fig 10. Max. Drain Current vs. Case Temperature
1.2
0.9
0.6
0.3
0.0
25
50
75
100
125
150
T,
C
Case
Temperature
[°¡ÉC]]
Fig 11. Thermal Response
D =0 .5
10⁰
0 .2
0 .1
0 .0 5
1 0 ^-1
0 .0 2
0 .0 1
sing le pu lse
¡Ø N otes :
1 . Z (t) = 3 .1 3 ¡É /W M a x .
¥èJC
2. D uty F a ctor, D =t /t
12
3. T - T = P * Z (t)
JM
C
DM
¥èJC
P_DM
t₁
t₂
1 0 ^-5
1 0 ^-4
1 0 ^-3
1 0 ^-2
1 0 ^-1
10⁰
10¹
t₁, S q u a re W a ve P u ls e D u ra tio n [s e c ]
4