FQP1N60 Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – QFET N-CHANNEL

QFET N-CHANNEL
FQP1N60
Fig 1. Output Characteristics
Top :
V_GS
15.0 V
10.0 V
8.0 V
10⁰
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
10^-1
10^-2
10^-1
¡Ø Note :
1. 250¥ìs Pulse Test
2. T_C = 25¡É
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
30
25
V_GS = 10V
20
V_GS = 20V
15
10
5
¡Ø Note : T = 25¡É
J
0
0.0
0.5
1.0
1.5
2.0
2.5
I_D, Drain Current [A]
Fig 5. Capacitance vs. Drain-Source Voltage
200
C_iss = C_gs + C_gd (C_ds = shorted)
C =C +C
oss
ds
gd
C =C
rss
gd
C_iss
150
C_oss
100
¡Ø Note ;
1. V_GS = 0 V
50
C_rss
2. f = 1 MHz
0
10^-1
10⁰
10¹
V , Drain-Source Voltage [V]
DS
Fig 2. Transfer Characteristics
10⁰
10^-1
2
150¡É
25¡É
-55¡É
¡Ø Note
1. V_DS = 50V
2. 250¥ìs Pulse Test
4
6
8
10
V , Gate-Source Voltage [V]
GS
Fig 4. Source-Drain Diode Forward Voltage
10⁰
10^-1
0.2
150¡É 25¡É
¡Ø Note :
1. V_GS = 0V
2. 250¥ìs Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V_SD , Source-Drain Voltage [V]
Fig 6. Gate Charge vs. Gate-Source Voltage
12
V_DS = 120V
10
V_DS = 300V
V_DS = 480V
8
6
4
2
¡Ø Note : I_D = 1.2 A
0
0
1
2
3
4
5
Q_G, Total Gate Charge [nC]
3