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FQP1N60 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – QFET N-CHANNEL | |||
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QFET N-CHANNEL
FEATURES
⢠Advanced New Design
⢠Avalanche Rugged Technology
⢠Rugged Gate Oxide Technology
⢠Very Low Intrinsic Capacitances
⢠Excellent Switching Characteristics
⢠Unrivalled Gate Charge: 5.0nC (Typ.)
⢠Extended Safe Operating Area
⢠Lower RDS(ON): 9.3⦠(Typ.)
ABSOLUTE MAXIMUM RATINGS
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Characteristics
Drain-to-Source Voltage
Continuous Drain Current (TC = 25°C)
Continuous Drain Current (TC = 100°C)
Drain Current-Pulsed
x
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
y
Avalanche Current
x
Repetitive Avalanche Energy
x
Peak Diode Recovery dv/dt
z
Total Power Dissipation (TC = 25°C)
Linear Derating Factor
Operating Junction and Storage
Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8â from case for 5-seconds
THERMAL RESISTANCE
Symbol
RθJC
RθCS
RθJA
Characteristics
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
FQP1N60
BVDSS = 600V
RDS(ON) = 11.5â¦
ID = 1.2A
TO-220
1
2
3
1. Gate 2. Drain 3. Source
Value
600
1.2
0.76
4.8
±30
50
1.2
4.0
4.5
40
0.32
â55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
Typ.
â
0.5
â
Max.
3.13
â
62.5
Units
°C/W
© 1999 Fairchild Semiconductor Corporation
REV. B
1
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