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FQNL1N50B Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – 500V N-Channel MOSFET
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Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
0.8
-100
※ Note :
1. VGS = 0 V
2. ID = 250 μ A
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation
vs Temperature.
Operation in This Area
is Limited by R DS(on)
100
100 µs 10 µs
1 ms
10 ms
100 ms
10-1
DC 1 s
10-2
※ Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
10-3
100
101
102
103
V , Drain-Source Voltage [V]
DS
Figure 9. Maximum Safe Operating Area.
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
※ Note :
1. VGS = 10 V
2. ID = 0.7 A
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs Temperature.
0.30
0.25
0.20
0.15
0.10
0.05
0.00
25
50
75
100
125
150
TC, Case Temperature [℃]
Figure 10. Maximum Drain Current
vs Case Temperature.
102
D = 0.5
0 .2
101
0 .1
0 .05
0 .02
0 .01
100
sin g le p u ls e
※ N otes :
1.
Zθ
(t)
JC
=
83
℃ /W
M ax.
2 . D uty F actor, D = t /t
12
3.
T
JM
-
T
C
=
P
DM
*
Zθ
(t)
JC
PDM
t1
t2
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
102
t1, S q u a re W a ve P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve.
©2001 Fairchild Semiconductor Corporation
Rev. A, March 2001
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