FQNL1N50B Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 500V N-Channel MOSFET

Typical Characteristics
10⁰
V_GS
Top : 15 V
10 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
10^-1
10^-2
10^-1
※ Notes :
1. 250μ s Pulse Test
2. T_C = 25℃
10⁰
10¹
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics.
24
20
V = 10V
GS
16
V = 20V
GS
12
8
4
※ Note : T = 25℃
J
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
I , Drain Current [A]
D
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage.
200
150
C
iss
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_rss = C_gd
C
oss
100
※ Note ;
50
1. V_GS = 0 V
C
rss
2. f = 1 MHz
0
10^-1
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics.
©2001 Fairchild Semiconductor Corporation
10⁰
10^-1
10^-2
2
150℃
25℃
-55℃
※ Notes :
1. V_DS = 50V
2. 250μ s Pulse Test
4
6
8
10
V , Gate-Source Voltage [V]
GS
Figure 2. Transfer Characteristics.
10⁰
10^-1
10^-2
0.2
150℃
25℃
※ Note :
1. V_GS = 0V
2. 250μ s Pulse Test
0.4
0.6
0.8
1.0
1.2
V_SD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
12
10
V_DS = 100V
V_DS = 250V
8
V = 400V
DS
6
4
2
※ Notes : I_D = 1.4 A
0
0
1
2
3
4
5
Q_G, Total Gate Charge [nC]
Figure 6. Gate -Charge Characteristics.
Rev. A, March 2001