FQNL1N50B Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – 500V N-Channel MOSFET

FQNL1N50B
500V N-Channel MOSFET
March 2001
QFET ^TM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply, power
factor correction, electronic lamp ballast based on half
bridge.
Features
• 0.27A, 500V, R_DS(on) = 9.0Ω @V_GS = 10 V
• Low gate charge ( typical 4.0 nC)
• Low Crss ( typical 3.0 pF)
• Fast switching
• Improved dv/dt capability
GDS
TO-92L
FQNL Series
Absolute Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
V_DSS
I_D
I_DM
V_GSS
I_AR
E_AR
dv/dt
P_D
T_J, T_STG
T_L
Parameter
Drain-Source Voltage
Drain Current
- Continuous (T_C = 25°C)
- Continuous (T_C = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 2)
Power Dissipation (T_C = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
R_θJA
Parameter
Thermal Resistance, Junction-to-Ambient
D
!
"
!"
G!
"
"
!
S
FQNL1N50B
500
0.27
0.17
1.08
± 30
0.27
0.15
4.5
1.5
0.012
-55 to +150
300
Typ
Max
--
83
Units
V
A
A
A
V
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
©2001 Fairchild Semiconductor Corporation
Rev. A, March 2001