English
Language : 

FQN1N60C Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – 600V N-Channel MOSFET
◁
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
1.2
1.1
1.0
0.9
0.8
-100
※ Notes :
1.
2.
VIDG=S
=0V
250 µ
A
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
※ Notes :
1. VGS = 10 V
2. ID = 0.15 A
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 10. Maximum Drain Current
vs. Case Temperature
100
10-1
100
Operation in This Area
is Limited by R DS(on)
100 µs
1 ms
10 ms
100 ms
DC
※ Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
101
102
103
VDS, Drain-Source Voltage [V]
0.3
0.2
0.1
0.0
25
50
75
100
125
150
TC, Case Temperature [℃]
Figure 11. Transient Thermal Response Curve
102
D =0.5
101
0 .2
0 .1
0.05
100
0.02
0.01
1 0 -1
1 0 -5
1 0 -4
single pulse
※ N otes :
1 . Z θ JL(t) = 5 0 ℃ /W M a x .
2. D uty Factor, D =t1/t2
3 . T JM - T L = P D M * Z θ J(L t)
1 0 -3
1 0 -2
1 0 -1
100
101
102
103
t1, S q u are W a ve P u lse D uratio n [sec]
FQN1N60C Rev. A
4
www.fairchildsemi.com
 ▷