FQN1N60C Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – 600V N-Channel MOSFET

FQN1N60C
600V N-Channel MOSFET
Features
• 0.3 A, 600 V, R_DS(on) = 11.5 Ω @ V_GS = 10 V
• Low gate charge ( typical 4.8 nC )
• Low Crss ( typical 3.5 pF)
• Fast switching
• 100 % avalanche tested
• Improved dv/dt capability
QFET ^®
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficiency switched mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge
topology.
GDS
TO-92
SSN Series
Absolute Maximum Ratings
Symbol
V_DSS
I_D
I_DM
V_GSS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J, T_STG
T_L
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (T_C = 25°C)
- Continuous (T_C = 100°C)
- Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (T_A = 25°C)
Power Dissipation (T_L = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
R_θJL
R_θJA
Parameter
Thermal Resistance, Junction-to-Lead
Thermal Resistance, Junction-to-Ambient
(Note 6a)
(Note 6b)
©2005 Fairchild Semiconductor Corporation
1
FQN1N60C Rev. A
G!
D
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S
FQN1N60C
600
0.3
0.18
1.2
± 30
33
0.3
0.3
4.5
1
3
0.02
-55 to +150
300
Typ
Max
--
50
--
140
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Units
°C/W
°C/W
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