FQN1N60C Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 600V N-Channel MOSFET

Typical Performance Characteristics
Figure 1. On-Region Characteristics
Top :
15V.0^GSV
10.0 V
8.0 V
7.0 V
10⁰
6.5 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
10^-1
10^-2
10^-1
※ Notes :
1. 250µ s Pulse Test
2. T_C = 25℃
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
30
25
20
15
10
5
0
0.0
V_GS = 10V
V_GS = 20V
※ Note : T_J = 25℃
0.5
1.0
1.5
2.0
2.5
I_D, Drain Current [A]
Figure 5. Capacitance Characteristics
250
200
150
100
50
0
10^-1
C_iss
C_oss
C_rss
CCC^{iorssssss===CCCggdsds++CCggdd(Cds = shorted)}
※ Notes ;
1.
2.
fV=^GS1=M0HVz
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 2. Transfer Characteristics
10⁰
150^oC
25^oC
-55^oC
10^-1
2
※ Notes :
1. V_DS = 40V
2. 250µ s Pulse Test
4
6
8
10
V_GS, Gate-Source Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
10⁰
10^-1
0.2
150℃
25℃
※ Notes :
1. V = 0V
GS
2. 250µ s Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
V , Source-Drain voltage [V]
SD
Figure 6. Gate Charge Characteristics
12
10
V_DS = 120V
V_DS = 300V
8
V_DS = 480V
6
4
2
※ Note : I_D = 1.1A
0
0
1
2
3
4
5
6
Q_G, Total Gate Charge [nC]
FQN1N60C Rev. A
3
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