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FQN1N50C Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – 500V N-Channel MOSFET
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Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
1.2
1.1
1.0
0.9
0.8
-100
※ Notes :
1. VGS = 0 V
2. ID = 250µA
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
※ Notes :
1. VGS = 10 V
2. ID = 0.19 A
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 10. Maximum Drain Current
vs. Case Temperature
101
100
10-1
Operation in This Area
is Limited by R DS(on)
10 µs
100 µs
1 ms
10 ms
100 ms
DC
10-2
※ Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
10-3
100
101
102
103
VDS, Drain-Source Voltage [V]
0.4
0.3
0.2
0.1
0.0
25
50
75
100
125
150
TC, Case Temperature [℃]
Figure 11. Transient Thermal Response Curve
102
D =0.5
101
0.2
0.1
0.05
0.02
100
0.01
1 0 -1
single pulse
PDM
t1
t2
※ N otes :
1. Z θJL(t) = 60 ℃ /W M ax.
2. D uty Factor, D = t1/t2
3. T - T = P * Z (t)
JM
L
DM
qJC
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
102
103
t1, S q ua re W ave P ulse D uration [sec]
FQN1N50C Rev. A
4
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