FQN1N50C Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – 500V N-Channel MOSFET

FQN1N50C
500V N-Channel MOSFET
Features
• 0.38 A, 500 V, R_DS(on) = 6.0 Ω @ V_GS = 10 V
• Low gate charge ( typical 4.9 nC )
• Low Crss ( typical 4.1 pF)
• Fast switching
• 100 % avalanche tested
• Improved dv/dt capability
January 2006
QFET ^®
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficiency switched mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge
topology.
D
GDS
TO-92
FQN Series
Absolute Maximum Ratings
Symbol
V_DSS
I_D
I_DM
V_GSS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J, T_STG
T_L
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (T_C = 25°C)
- Continuous (T_C = 100°C)
- Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (T_A = 25°C)
Power Dissipation (T_L = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
R_θJL
R_θJA
Thermal Resistance, Junction-to-Lead
Thermal Resistance, Junction-to-Ambient
(Note 6a)
(Note 6b)
G
S
FQN1N50C
500
0.38
0.24
3.04
± 30
44.4
0.38
0.21
4.5
0.89
2.08
0.017
-55 to +150
300
Typ
Max
--
60
--
140
©2006 Fairchild Semiconductor Corporation
1
FQN1N50C Rev. A
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Units
°C/W
°C/W
www.fairchildsemi.com