FQN1N50C Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 500V N-Channel MOSFET

Typical Performance Characteristics
Figure 1. On-Region Characteristics
Top :
V_GS
15.0 V
10.0 V
8.0 V
10⁰
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
10^-1
10^-2
10^-1
※ Notes :
1. 250µ s Pulse Test
2. T_C = 25℃
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
20
15
V_GS = 10V
10
V_GS = 20V
5
※ Note : T_J = 25℃
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
I_D, Drain Current [A]
Figure 5. Capacitance Characteristics
400
300
C_oss
C_iss
200
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_rss = C_gd
* Note :
1. V_GS = 0 V
2. f = 1 MHz
100
C_rss
0
10^-1
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 2. Transfer Characteristics
10⁰
150^oC
25^oC
-55^oC
10^-1
2
※ Notes :
1. V_DS = 40V
2. 250µ s Pulse Test
4
6
8
10
V_GS, Gate-Source Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
10⁰
150℃ _25℃
10^-1
0.2
※ Notes :
1. V_GS = 0V
2. 250µ s Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
V_SD, Source-Drain voltage [V]
Figure 6. Gate Charge Characteristics
12
10
V_DS = 100V
V_DS = 250V
8
V_DS = 400V
6
4
2
※ Note : I_D = 1A
0
0
1
2
3
4
5
6
Q_G, Total Gate Charge [nC]
FQN1N50C Rev. A
3
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