FQI5N60CTU Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – N-Channel QFET® MOSFET 600 V, 4.5 A, 2.5 Ω

Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
0.8
-100
※ Notes :
1. V_GS = 0 V
2. I_D = 250 μA
-50
0
50
100
150
200
T_J, Junction Temperature [^oC]
Figure 7. Breakdown Voltage Variation
vs Temperature
Operation in This Area
is Limited by R _DS(on)
10¹
100 μs
1 ms
10 ms
100 ms
10⁰
DC
10^-1
※ Notes :
1. T_C = 25 ^oC
2.
3.
ST^Jin=gl1e5P0u^oClse
10^-2
10⁰
10¹
10²
10³
V_DS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
※ Notes :
1. V_GS = 10 V
2. I_D = 2.25 A
-50
0
50
100
150
200
T_J, Junction Temperature [^oC]
Figure 8. On-Resistance Variation
vs Temperature
5
4
3
2
1
0
25
50
75
100
125
150
T_C, Case Temperature [℃]
Figure 10. Maximum Drain Current
vs Case Temperature
10⁰
D = 0.5
0 .2
1 0 ^-1
0 .1
0 .0 5
0 .0 2
0 .0 1
1 0 ^-2
1 0 ^-5
sin g le p u lse
※ N o te s :
1 . Z _{θ JC}(t) = 1 .2 5 ℃ /W M a x .
2 . D u ty F a c to r, D = t₁/t₂
3 . T _JM - T _C = P _DM * Z _{θ JC}(t)
P_DM
t₁
t₂
1 0 ^-4
1 0 ^-3
1 0 ^-2
1 0 ^-1
10⁰
10¹
t₁, S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
©2003 Fairchild Semiconductor Corporation
4
FQI5N60C Rev. C1
www.fairchildsemi.com