FQI5N60CTU Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – N-Channel QFET® MOSFET 600 V, 4.5 A, 2.5 Ω

Typical Characteristics
10^{1 Top :}
V_GS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
10⁰
5.5 V
5.0 V
Bottom : 4.5 V
10^-1
10^-2
10^-1
※ Notes :
1. 250μ s Pulse Test
2. T_C = 25℃
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
6
5
4
V_GS = 10V
3
2
V_GS = 20V
1
※ Note : T_J = 25℃
0
0
2
4
6
8
10
I_D, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
1000
800
600
400
200
C_iss
C_oss
C_rss
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_rss = C_gd
※ Notes ;
1. V_GS = 0 V
2. f = 1 MHz
0
10^-1
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
10¹
150^oC
10⁰
25^oC
-55^oC
10^-1
2
※ Notes :
1. V_DS = 40V
2. 250μ s Pulse Test
4
6
8
10
V_GS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10¹
10⁰
10^-1
0.2
150℃
25℃
※ Notes :
1. V_GS = 0V
2. 250μ s Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
V_SD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
V_DS = 120V
V_DS = 300V
8
V_DS = 480V
6
4
2
※ Note : I_D = 4.5A
0
0
4
8
12
16
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©2003 Fairchild Semiconductor Corporation
3
FQI5N60C Rev. C1
www.fairchildsemi.com