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FQI5N60CTU Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – N-Channel QFET® MOSFET 600 V, 4.5 A, 2.5 Ω
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Package Marking and Ordering Information
Device Marking
FQI5N60C
Device
FQI5N60CTU
Package
I2-PAK
Reel Size
Tube
Tape Width
N/A
Quantity
50 units
Electrical Characteristics TC = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min
Typ
Max Unit
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 μA
ID = 250 μA, Referenced to 25°C
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
600
--
--
V
--
0.6
--
V/°C
--
--
1
μA
--
--
10
μA
--
--
100
nA
--
--
-100
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 μA
VGS = 10 V, ID = 2.25 A
VDS = 40 V, ID = 2.25 A
2.0
--
4.0
V
--
2.0
2.5
Ω
--
4.7
--
S
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
515
670
pF
--
55
72
pF
--
6.5
8.5
pF
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 300 V, ID = 4.5A,
RG = 25 Ω
VDS = 480 V, ID = 4.5A,
VGS = 10 V
--
--
--
(Note 4)
--
--
--
(Note 4)
--
10
30
ns
42
90
ns
38
85
ns
46
100
ns
15
19
nC
2.5
--
nC
6.6
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 4.5 A
trr
Reverse Recovery Time
VGS = 0 V, IS = 4.5 A,
Qrr
Reverse Recovery Charge
dIF / dt = 100 A/μs
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. L = 18.9 mH, IAS = 4.5 A, VDD = 50V, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 4.5 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature.
--
--
4.5
A
--
--
18
A
--
--
1.4
V
--
300
--
ns
--
2.2
--
μC
©2003 Fairchild Semiconductor Corporation
2
FQI5N60C Rev. C1
www.fairchildsemi.com
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