FQI13N50CTU Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – N-Channel QFET® MOSFET 500 V, 13 A, 480 mΩ

Package Dimensions (Continued)
1.2
1.1
1.0
0.9
※ Notes :
1.
2.
VI_DG=S =2500V_μA
0.8
-100
-50
0
50
100
150
200
T_J, Junction Temperature [^oC]
Figure 7. Breakdown Voltage Variation
vs Temperature
Operation in This Area
10²
is Limited by R _DS(on)
10 μs
100 μs
1 ms
10¹
10 ms
100 ms
DC
10⁰
10^-1
10⁰
※ Notes :
1. T_C = 25 ^oC
2.
3.
ST^Jin=gl1e5P0u^olCse
10¹
10²
10³
V_DS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
※ Notes :
1.
2.
IV_DG=^S
= 10 V
6.5 A
-50
0
50
100
150
200
T_J, Junction Temperature [^oC]
Figure 8. On-Resistance Variation
vs Temperature
14
12
10
8
6
4
2
0
25
50
75
100
125
150
T_C, Case Temperature [℃]
Figure 10. Maximum Drain Current
vs Case Temperature
10⁰
D = 0.5
1 0 ^-1
1 0 ^-2
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
sin g le pu lse
※ N otes :
1.
2.
3.
ZD _{θu JtCy(}
T _JM -
t) = 0.64 ℃ /W M
Fa
T_C
ct
=
or,
P_D
M^{D*=Zt 1}θ^/
t
2
JC
(
t
a
)
x
.
P_DM
t₁
t₂
1 0 ^-5
1 0 ^-4
1 0 ^-3
1 0 ^-2
1 0 ^-1
10⁰
10¹
t₁, S q uare W ave P u lse D uration [se c]
Figure 11. Transient Thermal Response Curve
©2003 Fairchild Semiconductor Corporation
4
FQI13N50C Rev. C1
www.fairchildsemi.com