FQI13N50CTU Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel QFET® MOSFET 500 V, 13 A, 480 mΩ

FQI13N50C
N-Channel QFET^® MOSFET
500 V, 13 A, 480 mΩ
November 2013
Features
• 13 A, 500 V, R_DS(on) = 480 mΩ (Max.) @V_GS = 10 V, I_D = 6.5 A
• Low Gate Charge ( Typ. 43 nC)
• Low Crss ( Typ. 20 pF)
• 100% Avalanche Tested
• RoHS Compliant
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
active power factor correction (PFC), and electronic lamp
ballasts.
D
GDS
I²-PAK
G
Absolute Maximum Ratings T_C = 25°C unless otherwise noted.
Symbol
V_DSS
I_D
I_DM
V_GSS
E_AS
I_AR
E_AR
dv/dt
P_D
Parameter
Drain-Source Voltage
Drain Current
- Continuous (T_C = 25°C)
- Continuous (T_C = 100°C)
Drain Current
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T_C = 25°C)
- Derate above 25°C
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
T_J, T_STG
T_L
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
R_θJC
R_θJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
S
FQI13N50CTU
500
13
8
52
± 30
860
13
19.5
4.5
195
1.56
-55 to +150
300
FQI13N50CTU
0.64
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
1
FQI13N50C Rev. C1
www.fairchildsemi.com