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| FQI13N50CTU Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – N-Channel QFET® MOSFET 500 V, 13 A, 480 mΩ | |||
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Typical Characteristics
Top : 15V.0GSV
10.0 V
8.0 V
7.0 V
101
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
100
10-1
10-1
â» Notes :
1. 250μs Pulse Test
2. TC = 25â
100
101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
1.5
VGS = 10V
1.0
0.5
0
VGS = 20V
â» Note : TJ = 25â
5
10
15
20
25
30
35
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
3000
2500
2000
1500
1000
500
Ciss
Coss
Crss
CCCiorssssss===CCCggdsds++CCggdd(Cds = shorted)
â» Notes ;
1.
2.
Vf =GS1=M0HVz
0
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
101
150oC
25oC
100
-55oC
10-1
2
â» Notes :
1.
2.
V25DS0μ=s40PVulse
Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150â
25â
â» Notes :
1.
2.
2V5G0Sμ=s0VPulse
Test
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
VDS = 100V
10
VDS = 250V
8
VDS = 400V
6
4
2
â» Note : ID = 13A
0
0
10
20
30
40
50
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©2003 Fairchild Semiconductor Corporation
3
FQI13N50C Rev. C1
www.fairchildsemi.com
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