FQH8N100C Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – 1000V N-Channel MOSFET

Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
1.2
1.1
1.0
0.9
œ Notes :
1. V_GS = 0 V
2. I_D =250µA
0.8
-100
-50
0
50
100
150
200
T_J, Junction Temperature [^oC]
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
œNotes :
1. V_GS = 10 V
2. I_D = 4 A
-50
0
50
100
150
200
T_J, Junction Temperature [^oC]
Figure 10. Maximum Drain Current
vs. Case Temperature
Operation in This Area
10²
is Limited by R _DS(on)
10 µs
100 µs
10¹
1 ms
10 ms
DC
10⁰
10^-1
10^-2
10⁰
œ Notes :
1. T_C = 25 ^oC
2. T_J = 150 ^oC
3. Single Pulse
10¹
10²
10³
V_DS, Drain-Source Voltage [V]
Figure 11. Transient Thermal Response Curve
10⁰
8
6
4
2
0
25
50
75
100
125
150
T_C, Case Temperature []
D =0.5
1 0 ^-1
1 0 ^-2
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
sin g le p u ls e
œ N otes :
1. Z _{θ JC}(t) = 0.56  /W M ax.
2. D uty F actor, D = t₁/t₂
3. T _JM - T_C = P _DM * Z _{θ JC}(t)
P_DM
t₁
t₂
1 0 ^-5
1 0 ^-4
1 0 ^-3
1 0 ^-2
1 0 ^-1
10⁰
10¹
t₁, S q u a re W a ve P u lse D u ra tio n [se c]
4
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FQH8N100C Rev. A