FQH8N100C Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 1000V N-Channel MOSFET

Typical Performance Characteristics
Figure 1. On-Region Characteristics
V
Top : 15.0^GV^S
10.0 V
8.0 V
10¹
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
10⁰
œ Notes :
1. 250µs Pulse Test
10^-1
2. T_C = 25
10^-1
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
3.0
2.5
V_GS = 10V
2.0
1.5
V_GS = 20V
1.0
œNote : T_J =25
0.5
0
5
10
15
20
25
I_D, Drain Current [A]
Figure 5. Capacitance Characteristics
4000
3500
3000
2500
2000
1500
1000
500
0
10^-1
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_rss = C_gd
C_iss
C
oss
œ Notes :
1. V_GS = 0 V
2. f = 1 MHz
C_rss
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 2. Transfer Characteristics
10¹
150^oC
25^oC
10⁰
-55^oC
œ Notes :
1. V_DS = 50V
2. 250µs Pulse Test
10^-1
2
4
6
8
10
V_GS, Gate-Source Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
10¹
10⁰
10^-1
0.2
150
25
œ Notes :
1. V_GS = 0V
2. 250µs Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
V_SD, Source-Drain voltage [V]
Figure 6. Gate Charge Characteristics
12
V_DS = 200V
10
V_DS = 500V
V_DS = 800V
8
6
4
2
œ Note : I_D = 8A
0
0
10
20
30
40
50
60
70
Q_G, Total Gate Charge [nC]
3
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FQH8N100C Rev. A