FQH8N100C Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – 1000V N-Channel MOSFET

FQH8N100C
1000V N-Channel MOSFET
Features
• 8A, 1000V, R_DS(on) = 1.45Ω @V_GS = 10 V
• Low gate charge (typical 53nC)
• Low C_rss (typical 16pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
March 2008
QFET ^®
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
D
G
GDS
TO-247
FQH Series
Absolute Maximum Ratings
Symbol
V_DSS
I_D
I_DM
V_GSS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J, T_STG
T_L
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (T_C = 25°C)
- Continuous (T_C = 100°C)
- Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (T_C = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
Thermal Characteristics
Symbol
R_θJC
R_θCS
R_θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
S
FQH8N100C
1000
8.0
5.0
32
± 30
850
8.0
22
4.0
225
1.79
-55 to +150
300
Typ
--
0.24
--
Max
0.56
--
40
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2008 Fairchild Semiconductor Corporation
1
FQH8N100C Rev. A
www.fairchildsemi.com