FGPF4536 Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – 360V, PDP IGBT

Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V_GE
20
Common Emitter
T_C = 125^oC
16
50A
12
30A
8
I_C = 20A
4
0
0
4
8
12
16
20
Gate-Emitter Voltage, V_GE [V]
Figure 9. Gate charge Characteristics
15
12
200V
9
V_CC = 100V
6
3
Common Emitter
T_C = 25^oC
0
0
10
20
30
40
50
Gate Charge, Q_g [nC]
Figure 11. Turn-on Characteristics vs.
Gate Resistance
100
Figure 8. Capacitance Characteristics
2400
2000
Common Emitter
V_GE = 0V, f = 1MHz
T_C = 25^oC
1600
C_ies
1200
800
C_oes
400
C_res
0
0.1
1
10
30
Collector-Emitter Voltage, V_CE [V]
Figure 10. SOA Characteristics
500
100
10µs
100µs
10
1ms
10 ms
DC
1
Single Nonrepetitive
0.1
Pulse T_C = 25^oC
Curves must be derated
linearly with increase
in temperature
0.01
0.1
1
10
100
Collector-Emitter Voltage, V_CE [V]
1000
Figure 12. Turn-off Characteristics vs.
Gate Resistance
1000
10
1
0
t_r
t_d(on)
Common Emitter
V_CC = 200V, V_GE = 15V
I_C = 20A
T_C = 25^oC
T_C = 125^oC
10
20
30
40
50
Gate Resistance, R_G [Ω]
t_f
100
10
0
t_d(off)
Common Emitter
V_CC = 200V, V_GE = 15V
I_C = 20A
T_C = 25^oC
T_C = 125^oC
10
20
30
40
50
Gate Resistance, R_G [Ω]
FGPF4536 Rev. A
4
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