FGPF4536 Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 360V, PDP IGBT

Typical Performance Characteristics
Figure 1. Typical Output Characteristics
200 ^{TC = 25oC}
20V
15V
12V
10V
150
V_GE = 8V
100
Figure 2. Typical Output Characteristics
200 ^{TC = 125oC}
20V
15V _12V
150
10V
100
V_GE = 8V
50
50
0
0
1
2
3
4
5
6
Collector-Emitter Voltage, V_CE [V]
Figure 3. Typical Saturation Voltage
Characteristics
200 ^{Common Emitter}
V_GE = 15V
T_C = 25^oC
150 ^{TC = 125oC}
0
0
1
2
3
4
5
6
Collector-Emitter Voltage, V_CE [V]
Figure 4. Transfer Characteristics
200 ^{Common Emitter}
V_CE = 10V
T_C = 25^oC
150 ^{TC = 125oC}
100
100
50
50
0
0
1
2
3
4
5
6
Collector-Emitter Voltage, V_CE [V]
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
1.7
1.6
50A
1.5
1.4
30A
1.3
1.2
1.1
Common Emitter
I_C = 20A
V_GE = 15V
1.0
20 40 60 80 100 120 140
Collector-EmitterCase Temperature, T_C [^oC]
0
0
2
4
6
8
10 12
Gate-Emitter Voltage,V_GE [V]
Figure 6. Saturation Voltage vs. V_GE
20
Common Emitter
T_C = 25^oC
16
50A
12
30A
8
I_C = 20A
4
0
0
4
8
12
16
20
Gate-Emitter Voltage, V_GE [V]
FGPF4536 Rev. A
3
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