FGPF4536 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – 360V, PDP IGBT

FGPF4536
360V, PDP IGBT
Features
• High current capability
• Low saturation voltage: V_{CE (sat)} =1.59 V @ I_C = 50 A
• High input impedance
• Fast switching
• RoHS compliant
Application
• PDP System
August 2010
General Description
Using Novel Trench IGBT Technology, Fairchild’s new series of
trench IGBTs offer the optimum performance for PDP
applications where low conduction and switching losses are
essential.
GC E
TO-220F
(Retractable)
Absolute Maximum Ratings
Symbol
V_CES
V_GES
I_{C pulse(1)*}
P_D
T_J
T_stg
T_L
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Pulsed Collector Current
@ T_C = 25^oC
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ T_C = 25^oC
@ T_C = 100^oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
R_θJC(IGBT)
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Notes:
(1) Half Sine Wave, D < 0.01, pluse width < 5µsec
* Ic_pluse limited by max Tj
Ratings
360
± 30
220
28.4
11.4
-55 to +150
-55 to +150
300
Typ.
-
-
Max.
4.4
62.5
Units
V
V
A
W
W
o_C
o_C
o_C
Units
o_C/W
o_C/W
©2010 Fairchild Semiconductor Corporation
1
FGPF4536 Rev. A
www.fairchildsemi.com