FGH75N60UF Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – 600V, 75A Field Stop IGBT

Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V_GE
20
Common Emitter
T_C = 25^oC
16
12
8
150A
4
75A
I_C = 40A
0
0
4
8
12
16
20
Gate-Emitter Voltage, V_GE [V]
Figure 9. Capacitance Characteristics
8000
6000
Common Emitter
V_GE = 0V, f = 1MHz
T_C = 25^oC
C_ies
4000
2000
C_oes
C_res
0
1
10
30
Collector-Emitter Voltage, V_CE [V]
Figure 11. SOA Characteristics
500
10s
100
100s
10
1ms
10 ms
1
DC
Single Nonrepetitive
0.1 ^{Pulse T}C ^{= 25oC}
Curves must be derated
linearly with increase
in temperature
0.01
1
10
100
Collector-Emitter Voltage, V_CE [V]
1000
Figure 8. Saturation Voltage vs. V_GE
20
Common Emitter
T_C = 125^oC
16
12
8
75A
150A
4
I_C = 40A
0
0
4
8
12
16
20
Gate-Emitter Voltage, V_GE [V]
Figure 10. Gate charge Characteristics
15
Common Emitter
T_C = 25^oC
12
200V
V_CC = 100V
9
300V
6
3
0
0
50
100
150
200
250
Gate Charge, Q_g [nC]
Figure 12. Load Current vs. Frequency
140
V_CC = 400V
load Current : peak of square wave
120
100
80
60
40
Duty cycle : 50%
T = 100^oC
C
Powe Dissipation = 181W
20
1
10
100
Frequency [kHz]
1000
FGH75N60UF Rev. A1
4
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