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FGH75N60UF Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – 600V, 75A Field Stop IGBT
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Package Marking and Ordering Information
Device Marking
Device
FGH75N60UF
FGH75N60UFTU
Package
TO-247
Packaging
Type
Tube
Qty per Tube
30ea
Max Qty
per Box
-
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
Off Characteristics
BVCES
BVCES
TJ
ICES
IGES
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250A
Temperature Coefficient of Breakdown
Voltage
VGE = 0V, IC = 250A
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat) Collector to Emitter Saturation Voltage
IC = 250A, VCE = VGE
IC = 75A, VGE = 15V
IC = 75A, VGE = 15V,
TC = 125oC
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
VCC = 400V, IC = 75A,
RG = 3, VGE = 15V,
Inductive Load, TC = 25oC
VCC = 400V, IC = 75A,
RG = 3, VGE = 15V,
Inductive Load, TC = 125oC
VCE = 400V, IC = 75A,
VGE = 15V
600
-
-
V
-
0.75
-
V/oC
-
-
250
A
-
-
±400
nA
4.0
5.0
6.5
V
-
1.9
2.4
V
-
2.15
-
V
-
3850
-
pF
-
375
-
pF
-
147
-
pF
-
27
-
ns
-
70
-
ns
-
128
-
ns
-
30
80
ns
-
3.05
-
mJ
-
1.35
-
mJ
-
4.4
-
mJ
-
27
-
ns
-
74
-
ns
-
153
-
ns
-
35
-
ns
-
3.6
-
mJ
-
1.8
-
mJ
-
5.4
-
mJ
-
250
-
nC
-
30
-
nC
-
130
-
nC
FGH75N60UF Rev. A1
2
www.fairchildsemi.com
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