FGH75N60UF Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – 600V, 75A Field Stop IGBT

FGH75N60UF
600V, 75A Field Stop IGBT
Features
• High Current Capability
• Low Saturation Voltage: V_CE(sat) =1.9V @ I_C = 75A
• High Input Impedance
• Fast Switching
• RoHS Compliant
Applications
• Induction Heating, UPS, SMPS, PFC
April 2009
tm
General Description
Using Novel Field Stop IGBT Technology, Fairchild’s new
series of Field Stop IGBTs offer the optimum performance for
Induction Heating, UPS, SMPS and PFC applications where low
conduction and switching losses are essential.
E
C
G
COLLECTOR
(FLANGE)
Absolute Maximum Ratings
Symbol
V_CES
V_GES
I_C
I_{CM (1)}
P_D
T_J
T_stg
T_L
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ T_C = 25^oC
@ T_C = 100^oC
@ T_C = 25^oC
@ T_C = 25^oC
@ T_C = 100^oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R_JC(IGBT)
R_JA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Ratings
600
 20
150
75
225
452
181
-55 to +150
-55 to +150
300
Typ.
-
-
Max.
0.276
40
Units
V
V
A
A
A
W
W
o_C
o_C
o_C
Units
o_C/W
o_C/W
©2009 Fairchild Semiconductor Corporation
1
FGH75N60UF Rev. A1
www.fairchildsemi.com