FFH50US60S Datasheet, PDF (4/6 Pages) Fairchild Semiconductor – 50A, 600V Stealth™ Diode

Typical Performance Curves (Continued)
2.4
V_R = 390V, T_C = 125^oC
2.2
2.0
1.8
I_F = 100A
1.6
I_F = 50A
1.4
I_F = 25A
1.2
1.0
0.8
0.6
0
200
400
600
800
1000 1200
dI_F/dt, CURRENT RATE OF CHANGE (A/µs)
Figure 7. Reverse Recovery Softness Factor vs
dI_F/dt
1400
1200
f = 1MHZ
1000
800
600
400
200
0
0.03 0.1
1
10
100
V_R, REVERSE VOLTAGE (V)
Figure 9. Junction Capacitance vs Reverse Voltage
60
6
V_R = 390V, T_C = 125^oC
5
4
I_F = 100A
3
I_F = 50A
2
I_F = 25A
1
0
0
200
400
600
800
1000 1200
dI_F/dt, CURRENT RATE OF CHANGE (A/µs)
Figure 8. Reverse Recovery Charge vs dI_F/dt
-22
180
I_F = 50A, V_R = 390V, dI_F/dt = 600A/usec
-24
170
-26
160
I_RM(REC)
-28
150
-30
140
-32
130
-34
120
-36
110
-38 ^tRR
100
-40
90
-42
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
80
175
Figure 10. Maximum Reverse Recovery Current
and t_rr vs Case Temperature
50
40
30
20
10
0
115
125
135
145
155
165
175
T_C, CASE TEMPERATURE (^oC)
Figure 11. DC CURRENT DERATING CURVE
©2003 Fairchild Semiconductor Corporation
FFH50US60S Rev A3