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FFH50US60S Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – 50A, 600V Stealth™ Diode
September 2003
FFH50US60S
50A, 600V Stealth™ Diode
General Description
The FFH50US60S is a Stealth™ diode optimized for low loss
performance in output rectification. The Stealth™ family
exhibits low reverse recovery current (IRM(REC)), low VF and
soft recovery under typical operating conditions.
This device is intended for use as an output rectification diode
in Telecom power supplies and other power switching
applications. Lower VF and IRM(REC) reduces diode losses.
Formerly developmental type TA49468.
Features
• Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . tb / ta > 1.5
• Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . trr < 80ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . 175oC
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
• Avalanche Energy Rated . . . . . . . . . . . . . . . . . . . . 20mJ
Applications
• Switch Mode Power Supplies
• Power Factor Correction
• Uninterruptible Power Supplies
• Motor Drives
• Welders
Package
JEDEC STYLE 2 LEAD TO-247
ANODE
CATHODE
Symbol
K
A
CATHODE
(BOTTOM SIDE
METAL)
Device Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
Ratings
Units
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
PD
EAVL
TJ, TSTG
TL
TPKG
Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (TC = 120oC)
Repetitive Peak Surge Current (20kHz Square Wave)
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)
Power Dissipation
Avalanche Energy (1A, 40mH)
Operating and Storage Temperature Range
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Application Note AN-7528
600
V
600
V
600
V
50
A
100
A
500
A
200
W
20
mJ
-55 to 175
°C
300
°C
260
°C
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
©2003 Fairchild Semiconductor Corporation
FFH50US60S Rev A3