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FFH50US60S Datasheet, PDF (2/6 Pages) Fairchild Semiconductor – 50A, 600V Stealth™ Diode
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Package Marking and Ordering Information
Device Marking
50US60S
Device
FFH50US60S
Package
TO-247
Tape Width
N/A
Quantity
30
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off State Characteristics
IR
Instantaneous Reverse Current
VR = 600V
TC = 25°C
TC = 125°C
-
- 100 µA
-
-
1 mA
On State Characteristics
VF Instantaneous Forward Voltage
IF = 50A
TC = 25°C
TC = 125°C
- 1.38 1.54 V
- 1.37 1.53 V
Dynamic Characteristics
CJ Junction Capacitance
VR = 10V, IF = 0A
- 110 -
pF
Switching Characteristics
trr
Reverse Recovery Time
trr
IRM(REC)
QRR
trr
S
IRM(REC)
QRR
trr
S
IRM(REC)
QRR
dIM/dt
Reverse Recovery Time
Maximum Reverse Recovery Current
Reverse Recovered Charge
Reverse Recovery Time
Softness Factor (tb/ta)
Maximum Reverse Recovery Current
Reverse Recovered Charge
Reverse Recovery Time
Softness Factor (tb/ta)
Maximum Reverse Recovery Current
Reverse Recovered Charge
Maximum di/dt during tb
IF = 1A, dIF/dt = 100A/µs, VR = 15V
-
IF = 50A, dIF/dt = 100A/µs, VR = 15V -
IF = 50A,
-
dIF/dt = 200A/µs,
-
VR = 390V, TC = 25°C
-
IF = 50A,
-
dIF/dt = 200A/µs,
-
VR = 390V,
-
TC = 125°C
-
IF = 50A,
-
dIF/dt = 1000A/µs,
-
VR = 390V,
-
TC = 125°C
-
-
47 80 ns
75 124 ns
113 -
ns
9.6 -
A
0.9
-
µC
235 -
ns
1.5 -
-
15
-
A
2.3
-
µC
110 -
ns
0.8 -
-
46
-
A
3.1
-
µC
1000 - A/µs
Thermal Characteristics
RθJC
RθJA
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient TO-247
-
- 0.75 °C/W
-
-
30 °C/W
©2003 Fairchild Semiconductor Corporation
FFH50US60S Rev A3
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