FDR858P Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – Single P-Channel, Logic Level, PowerTrenchTM MOSFET

Typical Electrical Characteristics (continued)
10
I _D = -8A
8
6
V_DS= -5V
-15V
-10V
4
2
0
0
8
16
24
32
40
Q _g , GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
80
20
RDS(ON) ^LIMIT
100us
1ms
5
0.5
V_GS = -10V
SINGLE PULSE
10100mmss
1s
10s
DC
0.05 _{RθJA = 135°C/W}
A _{TA = 25°C}
0.01
0.1 0.2
0.5 1
2
5
10 20 30 50
- V_DS , DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
4000
2000
Ciss
1000
500
f = 1 MHz
V_GS = 0 V
Coss
Crss
200
0.1
0.3
1
3
10 15
30
-V_DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
40
R _θJA= 135°C/W
T_A = 25°C
30
20
10
0
0.0001 0.001
0.01
0.1
1
10
SINGLE PULSE TIME (SEC)
100 300
Figure 10. Single Pulse Maximum Power
Dissipation.
1
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.05
0.03
0.02
0.01
0.0001
0.1
0.05
0.02
0.01
Single Pulse
0.001
0.01
0.1
1
t ₁, TIME (sec)
R_θJA (t) = r(t) * R_θJA
R _θJA = 135°C/W
P(pk)
t1
t2
T_J - T_A = P * R _θJA (t)
Duty Cycle, D = t ₁/ t ₂
10
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in note 1c.
Transient thermal response will change depending on the circuit board design.
FDR858P Rev.C