FDR858P Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – Single P-Channel, Logic Level, PowerTrenchTM MOSFET

Typical Electrical Characteristics
60
V GS = -10V
-6.0V
48
-4.5V
-4.0V
36
-3.5V
24
12
-3.0V
0
0
1
2
3
4
5
- V_DS , DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.6
I_D = -8.0A
1.4 ^{VGS = -10V}
1.2
1
0.8
0.6
-50 -25
0
25
50
75 100 125 150
T_J , JUNCTION TEMPERATURE (° C)
Figure 3. On-Resistance Variation
with Temperature.
50
V_DS = -5V
40
30
T_J= -55°C
125°C
25°C
20
10
0
1
2
3
4
5
-V_GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2.5
2 VGS= -3.5 V
-4.0V
1.5
-4.5V
-5.5V
-7.0V
1
-10V
0.5
0
10
20
30
40
50
- I _D , DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.08
0.06
I_D = -4.0A
0.04
0.02
0
0
T_A = 125° C
25° C
2
4
6
8
10
- V_GS , GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
50
V_GS= 0V
10
1
0.1
TJ= 125°C
25°C
-55°C
0.01
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V_SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDR858P Rev.C