FDR858P Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – Single P-Channel, Logic Level, PowerTrenchTM MOSFET

February 1999
FDR858P
Single P-Channel, Logic Level, PowerTrench^TM MOSFET
General Description
The SuperSOT-8 family of P-Channel Logic Level
MOSFETs have been designed to provide a low profile,
small footprint alternative to industry standard SO-8 little
foot type product.
This P-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize the
on-state resistance and yet maintain low gate charge for
superior switching performance.
These devices are well suited for notebook computer
applications: load switching and power management,
battery charging circuits, and DC/DC conversion.
Features
-8 A, -30 V. R_DS(ON) = 0.019 Ω @ V_GS = -10 V,
R_DS(ON) = 0.028 Ω @ V_GS = -4.5 V.
Low gate charge (21nC typical).
High performance trench technology for extremely low
R_DS(ON).
SuperSOT^TM-8 package: small footprint (40%) less than
SO-8); low profile (1mm thick); maximum power
comperable to SO-8.
SOT-23
SuperSOT^TM-6
SuperSOT^TM-8
SO-8
SOT-223
SOIC-16
S
D
D
S
TM
SuperSOT -8
Mark: 858P
G
D
D
D
Absolute Maximum Ratings T_A = 25^oC unless otherwise noted
Symbol Parameter
V_DSS
Drain-Source Voltage
V_GSS
Gate-Source Voltage
I_D
Draint Current - Continuous
- Pulsed
(Note 1)
P_D
Maximum Power Dissipation
(Note 1a)
(Note 1b)
(Note 1c)
T_J,T_STG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
R_θJA
Thermal Resistance, Junction-to-Ambient (Note 1a)
R_θJC
Thermal Resistance, Junction-to-Case (Note 1)
© 1999 Fairchild Semiconductor Corporation
5
6
7
8
Ratings
-30
±20
-8
-50
1.8
1
0.9
-55 to 150
70
20
4
3
2
1
Units
V
V
A
W
°C
°C/W
°C/W
FDR858P Rev.C