FDMS86152 Datasheet, PDF (4/7 Pages) Fairchild Semiconductor – N-Channel PowerTrench MOSFET

Typical Characteristics T_J = 25 °C unless otherwise noted
10
I_D = 14 A
8
6
4
V_DD = 50 V
V_DD = 25 V
V_DD = 75 V
5000
1000
100
C_iss
C_oss
2
0
0
10
20
30
40
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
f = 1 MHz
VGS = 0 V
10
0.1
1
10
V_DS, DRAIN TO SOURCE VOLTAGE (V)
C_rss
100
Figure 8. Capacitance vs Drain
to Source Voltage
100
T_J = 25 ^oC
10
T_J = 100 ^oC
T_J = 125 ^oC
100
80
60
V_GS = 6 V
40
Limited by Package
20
R_θJC = 1.0 ^oC/W
V_GS = 10 V
1
0.01
0.1
1
10
t_AV, TIME IN AVALANCHE (ms)
Figure 9. Unclamped Inductive
Switching Capability
100200
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
1000
100
THIS AREA IS
LIMITED BY r_DS(on)
100 μs
10
1 SINGLE PULSE
T_J = MAX RATED
0.1
R_θJA = 115 ^oC/W
T_A = 25 ^oC
CURVE BENT TO
0.01
0.01
MEASURED DATA
0.1
1
10
1 ms
10 ms
100 ms
1s
10 s
DC
100 600
V_DS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
10000
1000
100
SINGLE PULSE
R_θJA = 115 ^oC/W
T_A = 25 ^oC
10
1
0.5
10^-4 10^-3 10^-2 10^-1
1
10
t, PULSE WIDTH (sec)
100 1000
Figure 12. Single Pulse Maximum
Power Dissipation
©2013 Fairchild Semiconductor Corporation
4
FDMS86152 Rev.C
www.fairchildsemi.com