FDMS86152 Datasheet, PDF (2/7 Pages) Fairchild Semiconductor – N-Channel PowerTrench MOSFET

Electrical Characteristics T_J = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BV_DSS
ΔBV_DSS
ΔT_J
I_DSS
I_GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I_D = 250 μA, V_GS = 0 V
100
I_D = 250 μA, referenced to 25 °C
V_DS = 80 V, V_GS = 0 V
V_GS = ±20 V, V_DS = 0 V
V
90
mV/°C
1
μA
±100 nA
On Characteristics
V_GS(th)
ΔV_GS(th)
ΔT_J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
r_DS(on)
Static Drain to Source On Resistance
g_FS
Forward Transconductance
V_GS = V_DS, I_D = 250 μA
2
I_D = 250 μA, referenced to 25 °C
V_GS = 10 V, I_D = 14 A
V_GS = 6 V, I_D = 11.5 A
V_GS = 10 V, I_D = 14 A, T_J = 125 °C
V_DS = 10 V, I_D = 14 A
3
4
V
-10
mV/°C
5.2
6
7.3
11
mΩ
8.7
10
42
S
Dynamic Characteristics
C_iss
C_oss
C_rss
R_g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V_DS = 50 V, V_GS = 0 V,
f = 1 MHz
2530 3370 pF
595
795
pF
22
35
pF
0.9
Ω
Switching Characteristics
t_d(on)
t_r
t_d(off)
t_f
Q_g
Q_g
Q_gs
Q_gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
V_DD = 50 V, I_D = 14 A,
V_GS = 10 V, R_GEN = 6 Ω
V_GS = 0 V to 10 V
V_GS = 0 V to 6 V V_DD = 50 V,
I_D = 14 A
17
30
ns
6
12
ns
25
39
ns
5
10
ns
36
50
nC
23
33
nC
10.7
nC
7.2
nC
Drain-Source Diode Characteristics
V_SD
Source to Drain Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
V_GS = 0 V, I_S = 2.1 A
V_GS = 0 V, I_S = 14 A
(Note 2)
(Note 2)
I_F = 14 A, di/dt = 100 A/μs
0.70 1.2
V
0.78 1.3
59
94
ns
74
119
nC
Notes:
1. R_θJA is determined with the device mounted on a 1 in² pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R_θJC is guaranteed by design while R_θCA is determined by
the user's board design.
a. 45 °C/W when mounted on a
1 in² pad of 2 oz copper.
b. 115 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting T_J = 25 °C, L = 3 mH, I_AS = 19 A, V_DD = 100 V, V_GS = 10 V. 100% test at L = 0.3 mH, I_AS = 42 A.
©2013 Fairchild Semiconductor Corporation
2
FDMS86152 Rev.C
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