FDMS86152 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – N-Channel PowerTrench MOSFET

FDMS86152
N-Channel PowerTrench^® MOSFET
100 V, 45 A, 6 mΩ
February 2013
Features
General Description
„ Max r_DS(on) = 6 mΩ at V_GS = 10 V, I_D = 14 A
„ Max r_DS(on) = 11 mΩ at V_GS = 6 V, I_D = 11.5 A
„ Advanced Package and Silicon combination for low r_DS(on)
and high efficiency
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench^® process thant has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
„ MSL1 robust package design
„ 100% UIL tested
„ RoHS Compliant
Applications
„ Primary DC-DC MOSFET
„ Secondary Synchronous Rectifier
„ Load Switch
Top
Pin 1
Bottom
Pin 1
SSSG
S
S
D
D
DDDD
S
D
G
D
Power 56
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Pulsed
T_C = 25 °C
T_A = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
T_C = 25 °C
Power Dissipation
T_A = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
100
±20
45
14
260
541
125
2.7
-55 to +150
Units
V
V
A
mJ
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
1.0
(Note 1a)
45
°C/W
Device Marking
FDMS86152
Device
FDMS86152
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2013 Fairchild Semiconductor Corporation
1
FDMS86152 Rev.C
www.fairchildsemi.com