FDMS3572_07 Datasheet, PDF (4/7 Pages) Fairchild Semiconductor – N-Channel UltraFET Trench® MOSFET 80V, 22A, 16.5mΩ

Typical Characteristics T_J = 25°C unless otherwise noted
10
V_DD = 30V
8
V_DD = 40V
V_DD = 50V
6
4
2
0
0
10
20
30
Qg, GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
10
9
8
7
6
5
4
T_J = 25^oC
3
T_J = 125^oC
2
1
0.01
0.1
1
10
100
t_AV, TIME IN AVALANCHE(ms)
Figure 9. Unclamped Inductive
Switching Capability
4000
1000
C_iss
C_oss
100
f = 1MHz
VGS = 0V
C_rss
50
0.1
1
10
100
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance vs Drain
to Source Voltage
50
40
V_GS = 10V
30
V_GS = 6V
20
Limited by Package
10
R_θJC = 1.6^oC/W
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
50
100us
10
1ms
10ms
1
0.1
0.01
OPERATION IN THIS
AREA MAY BE
LIMITED BY r_DS(on)
1E-3
0.1
1
SINGLE PULSE
T_J = MAX RATED
T_A = 25^OC
10
100ms
1s
10s
DC
100 300
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
2000
1000
100
10
V_GS = 10V
FOR TEMPERATURES
ABOVE 25^oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I₂₅
1_---5_---0_-----–_----T_----A---
125
T_A = 25^oC
1
SINGLE PULSE
0.3
10^-3
10^-2
10^-1
10⁰
10¹
10²
10³
t, PULSE WIDTH (s)
Figure 12. Single Pulse Maximum
Power Dissipation
FDMS3572 Rev.C1
4
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