FDMS3572_07 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – N-Channel UltraFET Trench® MOSFET 80V, 22A, 16.5mΩ

February 2007
FDMS3572
N-Channel UltraFET Trench^® MOSFET
tm
80V, 22A, 16.5mΩ
Features
General Description
„ Max r_DS(on) = 16.5mΩ at V_GS = 10V, I_D = 8.8A
„ Max r_DS(on) = 24mΩ at V_GS = 6V, I_D = 8.4A
„ Typ Qg = 28nC at V_GS = 10V
„ Low Miller Charge
„ Optimized efficiency at high frequencies
„ RoHS Compliant
UItraFET devices combine characteristics that enable
benchmark efficiency in power conversion applications.
Optimized for r_DS(on), low ESR, low total and Miller gate charge,
these devices are ideal for high frequency DC to DC converters.
Application
„ DC - DC Conversion
Pin 1
S S SG
DD DD
Power 56 (Bottom view)
D5
D6
D7
D8
4G
3^S
2S
1S
MOSFET Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
T_C = 25°C
T_C = 25°C
T_A = 25°C
Power Dissipation
T_C = 25°C
Power Dissipation
T_A = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
Ratings
80
±20
22
48
8.8
50
78
2.5
-55 to +150
Units
V
V
A
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
1.6
(Note 1a)
50
°C/W
Device Marking
FDMS3572
Device
FDMS3572
Package
Power 56
Reel Size
13’’
Tape Width
12mm
Quantity
3000 units
©2007 Fairchild Semiconductor Corporation
1
FDMS3572 Rev.C1
www.fairchildsemi.com