FDMS3572_07 Datasheet, PDF (3/7 Pages) Fairchild Semiconductor – N-Channel UltraFET Trench® MOSFET 80V, 22A, 16.5mΩ

Typical Characteristics T_J = 25°C unless otherwise noted
60
V_GS = 10V
50
40
30
V_GS = 8V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
V_GS = 6V
20
V_GS = 5V
10
0
0
1
2
3
4
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
3.5
3.0
2.5
V_GS = 5V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
2.0
V_GS = 6V
1.5
V_GS = 8V
1.0
0.5
0
10
20
30
40
I_D, DRAIN CURRENT(A)
V_GS = 10V
50
60
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
2.0
I_D = 8.8A
1.8 ^VGS ^{= 10V}
1.6
1.4
1.2
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (^oC)
Figure 3. Normalized On Resistance
vs Junction Temperature
50
40
30
I_D = 9A
20
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
T_J = 150^oC
T_J = 25^oC
10
4
5
6
7
8
9
10
V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
50
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
40
100
V_GS = 0V
10
30
20
T_J = 150^oC
T_J = 25^oC
10
T_J = -55^oC
0
2
3
4
5
6
7
V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
1
0.1
T_J = 150^oC
0.01
T_J = 25^oC
T_J = -55^oC
1E-3
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V_SD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
FDMS3572 Rev.C1
3
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