TIP140T_09 Datasheet, PDF (3/5 Pages) Fairchild Semiconductor – NPN Epitaxial Silicon Darlington Transistor

Typical Performance Characteristics
10
I = 2000uA
9^B
I = 1800uA
B
8 I = 1600uA
B
7
I = 1400uA
B
6
5
4
3
2
1
0
0
1
I _B ^{= 120}_{I B}^0u₌^A1000uA
I = 800uA
B
I = 600uA
B
I = 400uA
B
I = 200uA
B
2
3
4
5
V [V], COLLECTOR-EMITTER VOLTAGE
CE
Figure 1. Static Characteristic
100k
10k
V = 4V
CE
1k
100
10
0.1
1
10
100
I [A], COLLECTOR CURRENT
C
Figure 2. DC current Gain
10
V_BE(sat)
1
V (sat)
CE
0.1
I =500I
C
B
1000
100
f=0.1MHz
0.01
0.1
1
10
100
I [A], COLLECTOR CURRENT
C
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
10
1
10
100
1000
V [V], COLLECTOR-BASE VOLTAGE
CB
Figure 4. Collector Output Capacitance
100
10
DC
1
TIP140T
TIP141T
TIP142T
0.1
1
10
100
1000
V [V], COLLECTOR-EMITTER VOLTAGE
CE
Figure 5. Safe Operating Area
© 2009 Fairchild Semiconductor Corporation
TIP140T / TIP141T / TIP142T Rev. B2
3
100
80
60
40
20
0
0
25
50
75
100
125
150
175
T [oC], CASE TEMPERATURE
C
Figure 6. Power Derating
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