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| TIP140T_09 Datasheet, PDF (2/5 Pages) Fairchild Semiconductor – NPN Epitaxial Silicon Darlington Transistor | |||
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Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Condition
VCEO(sus)
Collector-Emitter Sustaining Voltage
: TIP140T
: TIP141T
: TIP142T
IC = 30mA, IB = 0
ICEO
ICBO
IEBO
hFE
Collector Cut-off Current
: TIP140T
: TIP141T
: TIP142T
Collector Cut-off Current
: TIP140T
: TIP141T
: TIP142T
Emitter Cut-off Current
DC Current Gain
VCE(sat) Collector-Emitter Saturation Voltage
VBE(sat)
VBE(on)
tD
tR
tSTG
tF
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Delay Time
Rise Time
Storage Time
Fall Time
VCE = 30V, IB = 0
VCE = 40V, IB = 0
VCE = 50V, IB = 0
VCB = 60V, IE = 0
VCB = 80V, IE = 0
VCB = 100V, IE = 0
VBE = 5V, IC = 0
VCE = 4V, IC = 5A
VCE =4V, IC = 10A
IC = 5A, IB = 10mA
IC = 10A, IB = 40mA
IC = 10A, IB = 40mA
VCE = 4V, IC = 10A
VCC = 30V, IC = 5A
IB1 = 20mA
IB2 = -20mA
RL = 6â¦
Min. Typ. Max. Units
60
V
80
V
100
V
2
mA
2
mA
2
mA
1
mA
1
mA
1
mA
2
mA
1000
500
2
V
3
V
3.5
V
3
V
0.15
µs
0.55
µs
2.5
µs
2.5
µs
© 2009 Fairchild Semiconductor Corporation
TIP140T / TIP141T / TIP142T Rev. B2
2
www.fairchildsemi.com
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